Singapore: Researchers have developed a new technology that enables bigger and longer lasting memory in electronics such as laptops and smartphones.

A team of researchers from the Department of Electrical & Computer Engineering at the National University of Singapore (NUS) Faculty of Engineering developed the new Magnetoresistive Random Access Memory (MRAM) technology that can boost information storage in electronic systems.

The technology will drastically increase storage space and enhance memory which will ensure that fresh data stays intact, even in the case of a power failure.

Led by Dr Yang Hyunsoo, the team developed a new device structure useful for the next generation MRAM chip which can potentially be applied to enhance the user experience in consumer electronics, including personal computers and mobile devices such as laptops and mobile phones.

The new technology can also be applied in transportation, military and avionics systems, robotics etc.

“From the consumer’s standpoint, we will no longer need to wait for our computers or laptops to boot up. Storage space will increase, and memory will be so enhanced that there is no need to regularly hit the ‘save’ button as fresh data will stay intact even in the case of a power failure,” Yang said.